Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors.For off state stress protection by deep p-locations is adopted, for on-state a thick oxide is used in order to avoid  the limits to screen remaining extrinsic oxide defe

We use next-generation processing with state-of-the-artwork technology and current technique to make sure an optimum remaining product performance. That is applied in each the material formulation as well as finished part processing.The driver has rail-to-rail drive capability and very small propagation delay, commonly seventeen ns. The enter thres

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